transistor(pnp) features ? high dc c urrent g ain ? high voltage ? complementary t o 2s c 4177 m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage - 60 v v ceo collector - emitter voltage - 50 v v ebo emitter - base voltage - 5 v i c collector current - 100 m a p c collector power dissipation 150 m w r ja thermal resistance fr om j u nction to a mbient 833 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown volta ge v (br) cbo i c = - 1 0 0 a , i e =0 - 60 v collector - emitter breakdown voltage v (br) c e o i c = - 1 ma, i b =0 - 50 v emitter - base breakdown voltage v (br)eb o i e = - 10 0 a , i c =0 - 5 v collector cut - off current i cbo v cb = - 6 0 v, i e =0 - 100 n a emitter cut - off current i e bo v eb = - 5 v, i c =0 - 100 n a dc current gain h fe * v ce = - 6 v, i c = - 1ma 90 600 collector - emitter saturation voltage v ce(sat) i c = - 100m a, i b = - 10 ma - 0. 3 v collector - emitter voltage v b e v ce = - 6 v, i c = - 1m a - 0.58 - 0.68 v transition frequency f t v ce = - 6 v,i c = - 1 0 ma 180 mhz collector output capacitance c ob v cb = - 10 v, i e =0, f=1mhz 4.5 pf * p ulse test: p ulse w idth 3 50 s, d uty c ycle 2.0%. classification of h fe rank m4 m5 m6 m7 range 90 C 180 135 C 270 200 C 400 300 C 600 marking m4 m5 m6 m7 so t C 3 23 1. base 2. emitter 3. collector 2sa1 61 1 1 date:2011/05 www.htsemi.com semiconductor jinyu
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